kw.\*:("Addition gallium")
Results 1 to 25 of 759
Selection :
Bridging grain boundary volume to segregation at symmetric grain boundariesMOON, Jaehyun; RICHTER, Gunther; SIGLE, Wilfried et al.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 2007, Vol 448, Num 1-2, pp 299-302, issn 0921-5093, 4 p.Article
Physical modeling of the effect of shearing on the concentration profile in a shear cellMATTHIESEN, D. H; DAVIDSON, K; ARNOLD, W. A et al.Journal of the Electrochemical Society. 1999, Vol 146, Num 8, pp 3087-3091, issn 0013-4651Article
Highly conductive and transparent Ga-doped epitaxial ZnO films on sapphire by CVDATAEV, B. M; BAGAMADOVA, A. M; DJABRAILOV, A. M et al.Thin solid films. 1995, Vol 260, Num 1, pp 19-20, issn 0040-6090Article
Acceleration of grain boundary motion in Al by small additions of GaMOLODOV, D. A; CZUBAYKO, U; GOTTSTEIN, G et al.Philosophical magazine letters. 1995, Vol 72, Num 6, pp 361-368, issn 0950-0839Article
Solute drag and wetting of a grain boundaryWEYGAND, D; BRECHET, Y; RABKIN, E et al.Philosophical magazine letters. 1997, Vol 76, Num 3, pp 133-138, issn 0950-0839Article
Some structure and magnetic effects of Ga incorporation on α-FEOOHDOS SANTOS, C. A; HORBE, A. M. C; BARCELLOS, C. M. O et al.Solid state communications. 2001, Vol 118, Num 9, pp 449-452, issn 0038-1098Article
Study of the Structural Role of Gallium and Aluminum in 45S5 Bioactive Glasses by Molecular Dynamics SimulationsMALAVASI, Gianluca; PEDONE, Alfonso; CRISTINA MENZIANI, Maria et al.The Journal of physical chemistry. B. 2013, Vol 117, Num 15, pp 4142-4150, issn 1520-6106, 9 p.Article
Characterisation of rapidly solidified nanocrystalline soft magnetic ribbons based on Fe-Si-B with P and Ga additionsGODEC, M; MANDRINO, D. J; SUSTARSIC, B et al.Surface and interface analysis. 2008, Vol 40, Num 3-4, pp 498-502, issn 0142-2421, 5 p.Conference Paper
Possible quantum critical point in La2/3Ca1/3Mn1-xGaxO3DE TERESA, J. M; ALGARABEL, P. A; RITTER, C et al.Physical review letters. 2005, Vol 94, Num 20, pp 207205.1-207205.4, issn 0031-9007Article
XPS analysis of FIB-milled SiFERRYMAN, Amy C; FULGHUM, Julia E; GIANNUZZI, Lucille A et al.Surface and interface analysis. 2002, Vol 33, Num 12, pp 907-913, issn 0142-2421, 7 p.Article
Oxidation of partially Ga-terminated Si(111) surfacesMARUNO, S; FUJITA, S; WATANABE, H et al.Surface science. 1997, Vol 377-79, pp 775-779, issn 0039-6028Conference Paper
Effect of impurity doping on density anomalies in molten siliconKAWANISHI, S; SASAKI, H; TERASHIMA, K et al.Japanese journal of applied physics. 1995, Vol 34, Num 11B, pp L1509-L1512, issn 0021-4922, 2Article
Superconductivity in thin-film germanium in the temperature regime around 1 KHERRMANNSDÖRFER, T; SKROTZKI, R; VOELSKOW, M et al.Superconductor science & technology (Print). 2010, Vol 23, Num 3, issn 0953-2048, 034007.1-034007.4Conference Paper
Nature of group-III related deep centers in lead telluride based semiconductors : Ga doping from vapor phasePETRENKO, Taras L; PLYATSKO, Sergey V; SIZOV, Fiodor F et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, Vol 7100, pp 71002O.1-71002O.10, issn 0277-786X, isbn 978-0-8194-7330-1 0-8194-7330-8, 2Vol, 2Conference Paper
First-principles study of the effects of segregated Ga on an Al grain boundaryYING ZHANG; LU, Guang-Hong; TIANMIN WANG et al.Journal of physics. Condensed matter (Print). 2006, Vol 18, Num 22, pp 5121-5128, issn 0953-8984, 8 p.Article
Gallium stabilization of δ-Pu : Density-functional calculationsSADIGH, Babak; WOLFER, Wilhelm G.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 20, pp 205122.1-205122.12, issn 1098-0121Article
The effect of Ga on internal friction of pure Al before and after deformationSHI, Y; CAI, B; KONG, Q. P et al.Journal of materials science. 2003, Vol 38, Num 9, pp 1895-1899, issn 0022-2461, 5 p.Article
Kinetic demixing of heterovalently doped CoO in an electrical fieldTELLER, O; MARTIN, M.Berichte der Bunsen-Gesellschaft. 1997, Vol 101, Num 9, pp 1377-1380, issn 0940-483XConference Paper
The effect of the prestrain temperature on the hardening of Zn and ZnGa monocrystals in the (0001) (1120) systemMIKULOWSKI, B.Physica status solidi. A. Applied research. 1996, Vol 157, Num 2, pp 287-293, issn 0031-8965Article
Ge:Ga photoconductor arrays: design considerations and quantitative analysis of prototype single pixelsBEEMAN, J. W; HALLER, E. E.Infrared physics & technology. 1994, Vol 35, Num 7, pp 827-836, issn 1350-4495Article
Red-shift in the photostimulation of the X-ray storage phosphor RbBr:Ga+ASSMANN, S; SCHWEIZER, S; SPAETH, J.-M et al.Radiation effects and defects in solids. 2001, Vol 154, Num 3-4, pp 337-340, issn 1042-0150Conference Paper
The effect of sample preparation on spreading resistance measurements of doped semiconductors : American crystal growth 1996TRUJILLO, A. H; MATTHIESEN, D. H.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 202-207, issn 0022-0248Conference Paper
Effect of Ga addition on the glass-forming ability of Fe-based bulk glassy alloySHEN, B. L; INOUE, A.Journal of materials science letters. 2003, Vol 22, Num 12, pp 857-859, issn 0261-8028, 3 p.Article
Temperature dependence of the photoconductivity of gallium-doped hydrogenated amorphous germanium filmsREIS, F. T; COMEDI, D; CHAMBOULEYRON, I et al.Journal of non-crystalline solids. 2000, Vol 266-69, pp 730-734, issn 0022-3093, bConference Paper
Neutron Laue diffraction from the magnetic structure of 4% Ga-doped FeGe2FORSYTH, J. B; BROWN, P. J; LEHMANN, M. S et al.Journal of magnetism and magnetic materials. 1998, Vol 177-81, pp 1395-1396, issn 0304-8853, 2Conference Paper